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Ordering number:ENN6436
N-Channel Silicon MOSFET
2SK3280
DC/DC Converter Applications
Features
* Low ON-resistance. * 4V drive. * Ultrahigh-speed switching.
Package Dimensions
unit:mm 2083B
[2SK3280]
6.5 5.0 4
1.5
2.3
0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6 1 2 3
7.5
0.5
2.3
2.3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
unit:mm 2092B
[2SK3280]
6.5 5.0 4 2.3
1.5
0.5
5.5
7.0
0.85 1 0.6
0.5
0.8
2
3
2.5
1.2 0 to 0.2
1.2
2.3
2.3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2615 No.6436-1/4
2SK3280 Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW10s, duty cycle1% Tc=25C
Conditions
Ratings 30 20 20 45 1 30 150 -55 to +150
Unit V V A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V ID=10A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A IS=20A, VGS=0 1.0 12 18 15 22 1000 410 160 11 210 80 85 17 3.3 1.7 1.0 1.2 20 31 Conditions Ratings min 30 1 10 2.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=10A RL=1.5
D
VOUT
G
P.G
50
2SK3280
S
No.6436-2/4
2SK3280
10
ID -- VDS
6.0V 4.5V
3.5 V
20 18
ID -- VGS
VDS=10V
9 8
8.0V
3. 0V
16
Drain Current, ID - A
7
Drain Current, ID - A
14 12 10 8 6 4 2 0
10.0V
6 5 4 3 2 1 0 0
VGS=2.5V
Tc= 7
0 0.5 1.0 1.5 2.0
5C
--2 5
2.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
C
25C
3.0
3.5
4.0
Drain-to-Source Voltage, VDS - V
60 55
IT01822 60
Gate-to-Source Voltage, VGS - V
IT01823
RDS(on) -- VGS
Tc=25C
Static Drain-to-Source On-State Resistance, RDS (on) - m
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS (on) - m
50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20
50
10A
40
30
ID=4A
20
=4A .5V, I D S=4 VG 10A .0V, I D= V GS=10
10
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS - V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 3 5
IT01824
Case Temperature, Tc - C
100 7 5 3 2
IT01825
yfs -- ID
VDS=10V
IF -- VSD
VGS=0
Forward Transfer Admittance, | yfs | - S
Forward Current, IF - A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
C --25 Tc= C 75
25
C
Drain Current, ID - A
1.0
7 10 IT01826
0.01 7 5 3 2 0.001 0.2
75
C
25 C
0.5
0.3
0.4
--25
0.6 0.7
Tc=
C
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD - V
10
IT01827
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS - V
VGS -- Qg
VDS=10V ID=20A
9 8 7 6 5 4 3 2 1 10 15 20 25 30 IT01828 0 0
Ciss, Coss, Crss - pF
Ciss
Coss
Crss
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 IT01829
Drain-to-Source Voltage, VDS - V
Total Gate Charge, Qg - nC
No.6436-3/4
2SK3280
1000 7 5
SW Time -- ID
VDD=15V VGS=10V td(off) tf
Switching Time, SW Time - ns
3
100 7 5 3 2
ASO
IDP=45A
<10s 1m 100s 10 s ms
Drain Current, ID - A
2 100 7 5 3 2
10 7 5 3 2 1.0 7 5 3 2
ID=20A
DC
op
era
tio
n
tr
td(on)
10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7 2 3
Operation in this area is limited by RDS(on).
1.0
10
0.1 7 5 3 2 Tc=25C Single pulse 0.01 0.01 2 3 5 7 0.1
23
Drain Current, ID - A
1.5
IT01830 40
Drain-to-Source Voltage, VDS - V
5 7 1.0
23
5 7 10
23
5 7 100 IT01831
PD -- Ta
Allowable Power Dissipation, PD - W
PD -- Tc
Allowable Power Dissipation, PD - W
35 30 25 20 15 10 5 0
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT01832
Case Temperature, Tc - C
IT01833
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice.
PS No.6436-4/4

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